Epitaxial wafer manufacturing for compound semiconductors — III-V materials (GaAs, GaN, InP) and IV-IV SiC — grown by MOCVD, MBE, or CVD onto native or engineered substrates. Serves wireless RF (GaAs/GaN HEMTs, PAs, filters), optoelectronics (VCSELs, DFB lasers, photodiodes, LEDs), power electronics (SiC and GaN switches for EVs, chargers, PV inverters, datacenter PSUs), and sensing (LiDAR, imaging).